naina s emiconductor 1 d-95, sector 63, noida sales@nainasemi.com schottky barrier rectifier diode features ? fast switching ? low forward voltage drop, v f ? guard ring protection ? high surge capacity ? high efficiency, low power loss maximum ratings (t c = 25 0 c, unless otherwise noted) parameter maximum instantaneous forward voltage maximum instantaneous reverse current at rated dc v oltage electrical ratings (t c = 25 0 c, unless otherwise noted) parameter symbol repetitive peak reverse voltage v rrm dc blocking voltage v dc non-repetitive peak reverse voltage v rsm average rectified forward current (t c = 85 0 c) i f(av) non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz i fsm thermal & mechanical specifications (t e parameters maximum thermal resistance, junction to case operating junction temperature range storage temperature mounting torque (non-lubricated threads) approximate allowable weight emiconductor ltd. sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com schottky barrier rectifier diode do- 203aa (do c, unless otherwise noted) test conditions i f = 5 a i f = 50 a maximum instantaneous reverse current at rated dc v oltage t c = 125 o c t c = 100 o c c, unless otherwise noted) symbol values units 45 v 54 v 25 a 600 a e = 25 0 c, unless otherwise noted) symbol maximum thermal resistance, junction to case r th(jc) t j t stg w 1n6391 4205450 ? fax: 0120 -4273653 www.nainasemi.com 203aa (do -4) symbol values units v f 0.44 v 0.78 v i r 40 ma 400 ma values units 2.0 0 c/w -65 to +125 0 c -65 to +125 0 c 15 in-lb 45.6 g www.datasheet.co.kr datasheet pdf - http://www..net/
naina s emiconductor 2 d-95, sector 63, noida sales@nainasemi.com emiconductor ltd. sector 63, noida C 201301, india ? tel: 0120- 4205450 ? fax: 0120 sales@nainasemi.com ? www.nainasemi.com all dimensions in mm 1n6391 4205450 ? fax: 0120 -4273653 www.nainasemi.com www.datasheet.co.kr datasheet pdf - http://www..net/
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